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| AP2315GEN Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S -30V 1.25 - 840mA Description SOT-23 G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. D G The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 30 16 -840 -670 -2.5 1.38 0.01 -55 to 150 -55 to 150 Units V V mA mA A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200721051-1/4 AP2315GEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.1 Max. Units 1.25 2.4 -3 -1 -25 30 1.6 50 V V/ V mS uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-0.8A VGS=-4.5V, ID=-0.5A 880 1 0.6 0.4 10 8 22 17 30 15 10 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-0.8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=16V ID=-0.8A VDS=-25V VGS=-4.5V VDS=-15V ID=-0.8A RG=3.3,VGS=-10V RD=18.8 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.1A, VGS=0V IS=-0.8A, VGS=0V, dI/dt=100A/s Min. - Typ. 27 30 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. 2/4 AP2315GEN 2.0 2.0 T A =25 o C -ID , Drain Current (A) 1.5 -10V -7.0V 1.5 TA=150oC -10V -7.0V -5.0V 1.0 -ID , Drain Current (A) 65m 1.0 -4.5V 0.5 -5.0V -4.5V 0.5 V G = -3.0V 0.0 0 2 4 6 8 V G = -3.0V 0.0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 4.5 1.8 I D = -0.5A 3.5 T A =25 C 1.4 o I D = -0.8A V GS = -10V Normalized RDS(ON) RDS(ON) (m ) 2.5 1.0 1.5 0.5 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 0.8 0.6 Normalized -VGS(th) (V) T j =150 o C -IS(A) 0.4 T j =25 o C 1.1 0.8 0.2 0.0 0 0.3 0.6 0.9 1.2 1.5 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2315GEN f=1.0MHz 12 100 -VGS , Gate to Source Voltage (V) 9 I D = -0.8A V DS = -25V 65m 6 C (pF) C iss 3 C oss C rss 0 0 1 2 3 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthja) Duty factor=0.5 1ms 1 0.2 -ID (A) 10ms 0.1 0.1 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.05 0.1 100ms T A =25 o C Single Pulse 1s DC 0.02 Rthja = 270 /W 0.01 Single pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1.0 V DS =-5V -ID , Drain Current (A) 0.8 VG T j =25 o C T j =150 o C QG -4.5V QGS QGD 0.6 0.4 0.2 Charge 0.0 Q 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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